- 제 목 : Hf-based high-K dielectric and metal gate electrode for advanced CMOS devices
- 발 표 자 : 주 문식박사 (National University of Singapore)
- 일 시 : 2005년 9월 21일(수) 14:00 ~ 16:00
- 장 소 : 공대11호관 103호
- 초청교수 : 함 성호 교수
- 강사약력 :
Moon Sig Joo received the B. S. degree in physics education from Seoul National University, Korea, in 1989 and the Master degree in physics from KAIST (Korea Advanced Institute of Science and Technology) in 1991. From 1991 to 2001, he was in Memory R&D division in Hynix Semiconductor as a senior
member of technical staff, where he worked on process development, module integration, reliability, and device characterization for the front-end process for DRAM and Flash EEPROM over 10 years. Since 2001, he has been with the Silicon Nano Device Lab (SNDL), Electrical and Computer Engineering Dept of National University of Singapore, where he was a processing manager and pursuing his Ph.D. His current research interests are high-K gate dielectric and metal gate electrode for advanced CMOS process. He is expected to receive the Ph. D degree from NUS in early 2006. In addition, he is going to join Hynix again in late September 2005. Over last 14 years, he has published over 40 internationally cited journal or conference papers and holds over 40 patents.
- 내용요약 :
With the continuous scaling of complimentary metal-oxide semiconductor (CMOS) devices, the high-K gate dielectric and metal gate stack is required for future CMOS devices with 65 nm technology node and beyond. The scope of the work includes studies on the high-K gate dielectric and metal gate stack for the future CMOS device application. A new process for Al incorporation into HfO2 will be studied, and interactions between high-k dielectrics and metal gates will be discussed. Firstly, a high quality MOCVD HfAlO dielectric film using a single cocktail liquid source HfAl(MMP)2(OiPr)5 as a new high-K fabrication method will be demonstrated. A wide range of composition controllability between HfO2 and Al2O3 in HfAlO is obtained by controlling deposition temperature. The HfAlO film with 90% HfO2, which has minimum sacrifice of K value, shows a great improvement in thermal stability and the significant reduction of leakage current compared to pure HfO2 film. Secondly, thermal instability of effective work function and its material dependence on metal/high-K gate stack will be presented. It is found that Si atoms at the interface play a critical role in the thermal instability of effective work function. The behavior of effective work function and the role of Si atoms will be discussed. Lastly, new findings on the Fermi-level pinning phenomenon in FUSI gate/high-K dielectric stack will be discussed. It is found that there is a critical composition ratio (Ccrit) of Ni to Si in Ni-FUSI gate which starts to show a strong Fermi-level pinning and the dep
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