1. 제 목 : High-Speed SiGe HBT Technology
2. 발표자 : 이재성 교수(고려대학교)
3. 일 시 : 2006. 1. 25(수) 11:00
4. 장 소 : 경북대 공대 11호관 103호
5. 초청교수 : 이 종호 교수
6. 강사약력
2004. 9 - 현재: 고려대학교 전자공학과 조교수
1999- 2004. 8: Advisory Engineer,
IBM Semiconductor R & D Center, NY, USA
1999. 9: University of Michigan 박사
1995. 2: 서울대학교 전자공학과 석사
1991. 2: 서울대학교 전자공학과 학사
7. 내용요약 :
The demand for high-speed semiconductor technologies is soaring due to the increasing need for the broad bandwidth in both wireless and wireline communication applications. SiGe HBT technology is considered as one of the promising candidates for such broadband communication applications, since it is compatible with existing Si CMOS in terms of fabrication technology, while exhibiting outstanding speed performance that is comparable to more exotic III-V based devices.
A recent SiGe HBT technology released by IBM that exhibits a cutoff frequency of 375 GHz is a good indication of such performance. This talk will provide an overview of the SiGe HBT technology with ample examples mostly from IBM, covering topics such as performance, fabrication process, and applications of SiGe HBT technology
8. 주최 : BK21 정보기술인력양성사업단, 반도체공정교육 및 지원센터,
전자전기컴퓨터학부
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