1. 제 목 : Made on Silicon: Integrating wide, direct bandgap
semiconductors on Si
2. 발 표 자 : M.-A. Hasan 교수 (University of North Carolina)
3. 일 시 : 2007년 7월 19일(목) 16:00 ~ 18:00
4. 장 소 : 경북대 공대11호관 103호
5. 초청교수 : 이 정 희 교수
6. 강사약력
Dr. Hasan received his Licentiate of Engineering in 1987 and Ph.D. in 1990 from Linköping Institute of Technology (Sweden) in Material Physics with a focus on growth and doping of semiconductors, low-energy ion-beam deposition and doping, modeling the basic physics of ion incorporation, SiGe-based devices, and optoelectronic properties. During his research carrier he has obtained more than eight scholarships and awards from various national and international organizations.
After graduation, he received the Welch Scholarship Award to continue his research interests at the Coordinated Science Laboratory and the Materials Research Laboratory of the University of Illinois at Urbana-Champaign where he worked on MBE growth of metastable GeSn system and UHV-CVD growth of semiconductors utilizing a combination of STM, STS, RHEED, and TEM to understand atomic mechanism and model stepwise kinetics of growth.
Since joining the University of North Carolina at Charlotte, he has established a new laboratory with a cluster growth facility integrating wide range of growth techniques and incompatible semiconductor systems. Currently, his research program is focused on integration of wide bandgap semiconductors (SiC, AlN, GaN and InN) on Si, and fabrication of high-power, high-temperature, and short-wavelength devices and sensors.
7. 내용요약
The widespread domestic utilization of integrated circuits (from stoves to computers) is primarily owed to the availability of an almost defect-free silicon wafers with diameters of up to 12 inches. In addition, high throughput ULSI device fabrication-methods with feature sizes below 50 nm have became established for Si-based circuits driving the price per chip to a lower value and the speed to higher limits. However, due to its indirect bandgap, light emission from Si is extremely inefficient, which has limited optoelectronic applications of Si to light detectors and prohibited high-speed circuit architectures based on optical interconnect. Moreover, the small bandgap of Si together with its low electron saturation-velocity has limited the applications of Si to low power, low frequency, and low temperature devices.
Integration of wide and direct bandgap semiconductors such as group III-nitrides (direct) and SiC (indirect) on Si offers the advantages of established Si technology while extends its applications to the forbidden zone. For example, integration of InGaN on Si would offer light emission from red to UV as well as solar-blind UV and X-ray detectors. The added capability would then enable optical interconnect, solid-state lighting, as well as a wide range of medical, environmental, space, and high-power device applications, all at the economical price of Si devices. However, integration of wide bandgap semiconductors on Si is not a straight forward task mainly due to the large lattice mismatch between theses semiconductors and Si. In this talk, the successes and difficulties of such integration schemes will be discussed with examples of research work carried out at UNC-Charlotte.
※ 주최 : 디스플레이기술교육센터(DTEC), 반도체공정교육 및 지원센터(NECST)
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