1. 제 목 : Challenges and Opportunities of Si-Nanoelectronic Devices 

2. 발 표 자 : Akiko Ohata (Osaka City University, Japan)

3. 일 시 : 2011년 5월 26일(목) 10:00 ~ 12:00

4. 장 소 : 공대 11호관 103호

5. 초청교수 : 이정희 교수

6. 강사약력 : (학 력 및 경력)

Akiko Ohata received the B. S. from Waseda University and the M.S. in theoretical physics from Tokyo Institute of Technology, Japan. She received Ph.D. degree in electronics from Tokyo Institute of Technology, Japan in 1995. She joined Toshiba Corporation as a scientist in 1986 and engaged in research of small-sized Si-MOSFET, Si quantum devices, and single electron devices. She has also engaged in research of Si single electron devices and SOI MOSFETs in RIKEN Institute, Tokyo Institute of Technology, Gunma University, and IMEP in France. She joined Osaka City university as an associate professor in 2009. She was with Toshiba Cambridge Research Center, IBM Watson research center, and IBM Albany nanotech center as a visiting researcher. 

7. 내용요약 :

As the transistor gate length is scaled down, new electrical characteristics based on the wave-particle duality of electrons are emerging and cause the limitation of the devices scaling. If these characteristics are controlled well or can be used for a device in the new circuits, LSIs will be further developed. In this seminar, these concerns and benefits for the device scaling will be discussed. In the second part, several important measurement methods for evaluating the electrical characteristics for nano-silicon film transistors, which are promising candidate for a sub-20-nm MOSFET structure, will be reviewed. Which includes special techniques for current-voltage and capacitance-voltage measurements and parameter extraction methods of nano-scaled MOSFET device.

※ 주최 : BK21 정보기술연구인력양성사업단, IT대학
▶ 문의처 : BK21정보기술연구인력양성사업단 ☎ 950-6613